Nonresonant detection of terahertz radiation in field effect transistors

Helicity sensitive terahertz radiation detection by field effect transistors

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Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation

Strained-Si modulation doped field effect transistors have been studied as detectors of 0.2 THz and 1.6 THz electromagnetic radiation at room temperature. The difference in the gate voltage dependences for 0.2 THz and 1.6 THz radiation and spatial pattern of the transistor response to focused 1.6 THz radiation confirms that the mechanism of detection is linked to the excitations of the two-dime...

Detection of Terahertz Radiation from Submicron Plasma Waves Transistors

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors

Terahertz Detection of Quantum Cascade Laser Emission by Plasma Waves in Field Effect Transistors F. Teppea,∗, C. Consejo, J. Torres, B. Chenaud, P. Solignac, S. Fathololoumi, Z.R. Wasilewski, M. Zholudev, N. Dyakonova, D. Coquillat, A. El Fatimy, P. Buzatu, C. Chaubet and W. Knap L2C, UMR N◦ 5221 CNRS, Université Montpellier 2, GIS-TERALAB, 34095 Montpellier, France IES, UMR N◦ 5214 CNRS, Univ...

Nonresonant Response Characteristics to Terahertz Radiation of FETs: Influence of Magnetic Field

Nonresonant detection on terahertz radiation of field effect transistors by the influence of magnetic field is studied in this paper. The influence of the magnetic field upon the electron mobility in the transistor channel is discussed and the corresponding influence on the nonresonant detection photoresponse is analyzed in detail. Based on the work before, the numerical tool has been modified ...